Position dependence of charge collection in prototype sensors for the CMS pixel detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence1 of 1 multiplied by 10**1**5 n //e//q/cm**2 at the CERN PS. Afterward, they were bump bonded to unirradiated readout chips...

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Detalles Bibliográficos
Autores principales: Rohe, Tilman, Bortoletto, Daniela, Chiochia, Vincenzo, Cremaldi, Lucien M, Cucciarelli, Susanna, Dorokhov, Andrei, Konecki, Marcin, Prokofiev, Kirill, Regenfus, Christian, Sanders, David A, Son Seung Hee, Speer, Thomas, Swartz, Morris
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/816794

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