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Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative phenomenological model developed previously by the authors...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1238/Physica.Regular.069a00376 http://cds.cern.ch/record/817715 |