Cargando…

An enhanced device simulation of heavily irradiated silicon detectors at cryogenic temperatures

Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/ cm /sup -2/ 1MeV neutrons. Rece...

Descripción completa

Detalles Bibliográficos
Autores principales:	Moscatelli, F, Santocchia, A, MacEvoy, B, Hall, G, Passeri, D, Merlani, R, Pignatel, Giogrio Umberto
Lenguaje:	eng
Publicado:	2004
Materias:	Health Physics and Radiation Effects
Acceso en línea:	http://cds.cern.ch/record/818328

Ejemplares similares

Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures
por: Moscatelli, F, et al.
Publicado: (2004)

A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures
por: Santocchia, A, et al.
Publicado: (2003)

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures
por: MacEvoy, B, et al.
Publicado: (2002)

A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
por: Petasecca, Marco, et al.
Publicado: (2005)

Silicon detectors irradiated "in situ" at cryogenic temperatures
por: Ruggiero, G, et al.
Publicado: (2002)

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
por: Casagrande, L, et al.
Publicado: (1998)

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
por: Casagrande, L, et al.
Publicado: (1999)

Recent developments in silicon radiation detectors at IRST
por: Pignatel, Giogrio Umberto, et al.
Publicado: (2000)

Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
por: Da Vià, C, et al.
Publicado: (1999)

Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors
por: Härkönen, J, et al.
Publicado: (2007)

Bulk Damage Effects in Irradiated Silicon Detectors due to Clustered Divacancies
por: Gill, K, et al.
Publicado: (1997)

Evidence for charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
por: Palmieri, V G, et al.
Publicado: (1998)

Irradiation studies of silicon pixel detectors for CMS
por: Bölla, G, et al.
Publicado: (2003)

Numerical analysis of thinned silicon detectors
por: Petasecca, M, et al.
Publicado: (2007)

Simulation of Heavily Irradiated Silicon Pixel Detectors
por: Swartz, M., et al.
Publicado: (2006)

High Voltage Operation of heavily irradiated silicon microstrip detectors
por: Gu, W H, et al.
Publicado: (1999)

Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors
por: Petasecca, M, et al.
Publicado: (2006)

Test results on heavily irradiated silicon detectors for the CMS experiment at LHC
por: Albergo, S, et al.
Publicado: (2000)

Defect evolution in silicon detector material
por: MacEvoy, B C
Publicado: (1996)

Heavily irradiated double-sided wedge silicon microstrip detector
por: Bruzzi, Mara, et al.
Publicado: (1998)

Operation of Heavily Irradiated Silicon Detectors Under Forward Bias
por: Chilingarov, A G, et al.
Publicado: (1997)

Operation of heavily irradiated silicon detectors in non-depletion mode
por: Verbitskaya, E, et al.
Publicado: (2006)

Irradiation effects on thin epitaxial silicon detectors
por: Khomenkov, V, et al.
Publicado: (2006)

Defect Engineering Radiation Tolerant Silicon Detectors
por: MacEvoy, B C, et al.
Publicado: (1997)

Analysis and simulation of charge collection efficiency in silicon thin detectors
por: Petasecca, M, et al.
Publicado: (2005)

Defect kinetics in silicon detector material for applications at the Large Hadron Collider
por: MacEvoy, B C
Publicado: (1997)

Radiation damage in silicon detectors
por: Lindström, G
Publicado: (2003)

Radiation damage in silicon detectors
por: Bruzzi, Mara
Publicado: (2000)

Lithium ion irradiation of standard and oxygenated silicon diodes
por: Candelori, A, et al.
Publicado: (2004)

Test results of heavily irradiated Si detectors
por: Albergo, S, et al.
Publicado: (1999)

The impact of neutral base region on the collected charge in heavily irradiated silicon detectors
por: Verbitskaya, E, et al.
Publicado: (2010)

Double peak electric field distortion in heavily irradiated silicon strip detectors
por: Eremin, Vladimir, et al.
Publicado: (2004)

Comparison of radiation damage in silicon induced by proton and neutron irradiation
por: Ruzin, A, et al.
Publicado: (1999)

Safety with cryogenic fluids
por: Zabetakis, Michael G
Publicado: (1967)

Irradiated silicon detectors operated at cryogenic temperatures: the Lazarus effect
por: Granata, V, et al.
Publicado: (2000)

Experimental studies of radiation damage of silicon detectors
por: Angelescu, T, et al.
Publicado: (1994)

Silicon solid state devices and radiation detection
por: Leroy, Claude, et al.
Publicado: (2012)

Operational voltage of silicon heavily irradiated strip detectors utilizing avalanche multiplication effect
por: Verbitskaya, E, et al.
Publicado: (2012)

Electric ﬁeld modeling in heavily irradiated silicon detectors based on Edge-TCT measurements
por: Kramberger, Gregor, et al.
Publicado: (2013)

A microscopic explanation for type inversion and the annealing behaviour of radiation damaged silicon detectors
por: Matheson, J, et al.
Publicado: (1995)

Cannot write session to /tmp/vufind_sessions/sess_krldrrq0gfpu07u1tm7u4ofdbl