Results of proton irradiation of components for the LHCb Silicon Tracker

This report informs about results of a proton irradiation of devices tested for the LHCb Silicon Tracker. The test was focused on analysing the response of the selected devices to Total Ionizing Dose (TID) effects, for Single Event Effects (SEE) and Non Ionizing Energy Loss (NIEL). The devices were...

Descripción completa

Detalles Bibliográficos
Autores principales: Vollhardt, A, Esperante-Pereira, D, Ermoline, Yu
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/821927
Descripción
Sumario:This report informs about results of a proton irradiation of devices tested for the LHCb Silicon Tracker. The test was focused on analysing the response of the selected devices to Total Ionizing Dose (TID) effects, for Single Event Effects (SEE) and Non Ionizing Energy Loss (NIEL). The devices were part of a proton irradiation test in November 2003 at PSI (Paul Scherrer Institute, Switzerland).

Ejemplares similares