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Measurements on irradiated silicon sensor prototypes for the Inner Tracker of LHCb
We present results from an irradiation study on silicon sensor prototypes for the Inner Tracker of the LHCb experiment. The irradiation was carried out using 24 GeV/c protons at the PS at CERN. Sensors were irradiated up to a fluence of about $6 imes10^{13}$ p/cm$^{2}$, corresponding to 20 years of...
Autores principales: | , , |
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Lenguaje: | eng |
Publicado: |
2005
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/827341 |
Sumario: | We present results from an irradiation study on silicon sensor prototypes for the Inner Tracker of the LHCb experiment. The irradiation was carried out using 24 GeV/c protons at the PS at CERN. Sensors were irradiated up to a fluence of about $6 imes10^{13}$ p/cm$^{2}$, corresponding to 20 years of LHCb operation. Measurements of the leakage current and depletion voltage were performed, as well as AC- and DC- strip tests. |
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