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The insulated gate bipolar transistor IGBT: theory and design

Detalles Bibliográficos
Autor principal: Khanna, Vinod Kumar
Lenguaje:eng
Publicado: IEEE 2003
Materias:
Acceso en línea:http://cds.cern.ch/record/831753
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author Khanna, Vinod Kumar
author_facet Khanna, Vinod Kumar
author_sort Khanna, Vinod Kumar
collection CERN
id cern-831753
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
publisher IEEE
record_format invenio
spelling cern-8317532021-04-22T02:23:32Zhttp://cds.cern.ch/record/831753engKhanna, Vinod KumarThe insulated gate bipolar transistor IGBT: theory and designEngineeringIEEEoai:cds.cern.ch:8317532003
spellingShingle Engineering
Khanna, Vinod Kumar
The insulated gate bipolar transistor IGBT: theory and design
title The insulated gate bipolar transistor IGBT: theory and design
title_full The insulated gate bipolar transistor IGBT: theory and design
title_fullStr The insulated gate bipolar transistor IGBT: theory and design
title_full_unstemmed The insulated gate bipolar transistor IGBT: theory and design
title_short The insulated gate bipolar transistor IGBT: theory and design
title_sort insulated gate bipolar transistor igbt: theory and design
topic Engineering
url http://cds.cern.ch/record/831753
work_keys_str_mv AT khannavinodkumar theinsulatedgatebipolartransistorigbttheoryanddesign
AT khannavinodkumar insulatedgatebipolartransistorigbttheoryanddesign