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The insulated gate bipolar transistor IGBT: theory and design
Autor principal: | |
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Lenguaje: | eng |
Publicado: |
IEEE
2003
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/831753 |
_version_ | 1780905822928240640 |
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author | Khanna, Vinod Kumar |
author_facet | Khanna, Vinod Kumar |
author_sort | Khanna, Vinod Kumar |
collection | CERN |
id | cern-831753 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2003 |
publisher | IEEE |
record_format | invenio |
spelling | cern-8317532021-04-22T02:23:32Zhttp://cds.cern.ch/record/831753engKhanna, Vinod KumarThe insulated gate bipolar transistor IGBT: theory and designEngineeringIEEEoai:cds.cern.ch:8317532003 |
spellingShingle | Engineering Khanna, Vinod Kumar The insulated gate bipolar transistor IGBT: theory and design |
title | The insulated gate bipolar transistor IGBT: theory and design |
title_full | The insulated gate bipolar transistor IGBT: theory and design |
title_fullStr | The insulated gate bipolar transistor IGBT: theory and design |
title_full_unstemmed | The insulated gate bipolar transistor IGBT: theory and design |
title_short | The insulated gate bipolar transistor IGBT: theory and design |
title_sort | insulated gate bipolar transistor igbt: theory and design |
topic | Engineering |
url | http://cds.cern.ch/record/831753 |
work_keys_str_mv | AT khannavinodkumar theinsulatedgatebipolartransistorigbttheoryanddesign AT khannavinodkumar insulatedgatebipolartransistorigbttheoryanddesign |