Silicon sensor probing and radiation studies for the LHCb Silicon Tracker

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200~$\mu$m and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38 cm in length. We present the qual...

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Detalles Bibliográficos
Autores principales: Adeva, B, Agari, M, Bauer, C, Baumann, G, Bay, A, Bernhard, R P, Bernet, R, Blouw, J, Boeni, D, Buchmann, L, Büchler, A, Carron, B, Chiapolini, N, Dona, P, Eisenring, E, Esperante-Pereira, D, Fauland, P, Frei, R, Gassner, J, Hofmann, W, Jiménez-Otero, S, Köstner, S, Knöpfle, K T, Landwehr, A, Lehner, F, Löchner, S, Lois, C, Mattle, T, Müller, T, Needham, M, Nüesch, S, Perrin, A, Pugatch, V, Pylypchenko, Y, Schmelling, M, Schwingenheuer, B, Steinkamp, O, Straumann, U, Tran, M T, Van Hunen, J J, Vázquez, P, Vervink, K, Vollhardt, A, Voss, H, Volyanskyy, D, Wenger, A
Lenguaje:eng
Publicado: 2005
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/872401
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author Adeva, B
Agari, M
Bauer, C
Baumann, G
Bay, A
Bernhard, R P
Bernet, R
Blouw, J
Boeni, D
Buchmann, L
Büchler, A
Carron, B
Chiapolini, N
Dona, P
Eisenring, E
Esperante-Pereira, D
Fauland, P
Frei, R
Gassner, J
Hofmann, W
Jiménez-Otero, S
Köstner, S
Knöpfle, K T
Landwehr, A
Lehner, F
Löchner, S
Lois, C
Mattle, T
Müller, T
Needham, M
Nüesch, S
Perrin, A
Pugatch, V
Pylypchenko, Y
Schmelling, M
Schwingenheuer, B
Steinkamp, O
Straumann, U
Tran, M T
Van Hunen, J J
Vázquez, P
Vervink, K
Vollhardt, A
Voss, H
Volyanskyy, D
Wenger, A
author_facet Adeva, B
Agari, M
Bauer, C
Baumann, G
Bay, A
Bernhard, R P
Bernet, R
Blouw, J
Boeni, D
Buchmann, L
Büchler, A
Carron, B
Chiapolini, N
Dona, P
Eisenring, E
Esperante-Pereira, D
Fauland, P
Frei, R
Gassner, J
Hofmann, W
Jiménez-Otero, S
Köstner, S
Knöpfle, K T
Landwehr, A
Lehner, F
Löchner, S
Lois, C
Mattle, T
Müller, T
Needham, M
Nüesch, S
Perrin, A
Pugatch, V
Pylypchenko, Y
Schmelling, M
Schwingenheuer, B
Steinkamp, O
Straumann, U
Tran, M T
Van Hunen, J J
Vázquez, P
Vervink, K
Vollhardt, A
Voss, H
Volyanskyy, D
Wenger, A
author_sort Adeva, B
collection CERN
description The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200~$\mu$m and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38 cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24~GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined.
id cern-872401
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-8724012019-09-30T06:29:59Zhttp://cds.cern.ch/record/872401engAdeva, BAgari, MBauer, CBaumann, GBay, ABernhard, R PBernet, RBlouw, JBoeni, DBuchmann, LBüchler, ACarron, BChiapolini, NDona, PEisenring, EEsperante-Pereira, DFauland, PFrei, RGassner, JHofmann, WJiménez-Otero, SKöstner, SKnöpfle, K TLandwehr, ALehner, FLöchner, SLois, CMattle, TMüller, TNeedham, MNüesch, SPerrin, APugatch, VPylypchenko, YSchmelling, MSchwingenheuer, BSteinkamp, OStraumann, UTran, M TVan Hunen, J JVázquez, PVervink, KVollhardt, AVoss, HVolyanskyy, DWenger, ASilicon sensor probing and radiation studies for the LHCb Silicon TrackerDetectors and Experimental TechniquesThe LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200~$\mu$m and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38 cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24~GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined.LHCb-2005-033CERN-LHCb-2005-033oai:cds.cern.ch:8724012005-08-10
spellingShingle Detectors and Experimental Techniques
Adeva, B
Agari, M
Bauer, C
Baumann, G
Bay, A
Bernhard, R P
Bernet, R
Blouw, J
Boeni, D
Buchmann, L
Büchler, A
Carron, B
Chiapolini, N
Dona, P
Eisenring, E
Esperante-Pereira, D
Fauland, P
Frei, R
Gassner, J
Hofmann, W
Jiménez-Otero, S
Köstner, S
Knöpfle, K T
Landwehr, A
Lehner, F
Löchner, S
Lois, C
Mattle, T
Müller, T
Needham, M
Nüesch, S
Perrin, A
Pugatch, V
Pylypchenko, Y
Schmelling, M
Schwingenheuer, B
Steinkamp, O
Straumann, U
Tran, M T
Van Hunen, J J
Vázquez, P
Vervink, K
Vollhardt, A
Voss, H
Volyanskyy, D
Wenger, A
Silicon sensor probing and radiation studies for the LHCb Silicon Tracker
title Silicon sensor probing and radiation studies for the LHCb Silicon Tracker
title_full Silicon sensor probing and radiation studies for the LHCb Silicon Tracker
title_fullStr Silicon sensor probing and radiation studies for the LHCb Silicon Tracker
title_full_unstemmed Silicon sensor probing and radiation studies for the LHCb Silicon Tracker
title_short Silicon sensor probing and radiation studies for the LHCb Silicon Tracker
title_sort silicon sensor probing and radiation studies for the lhcb silicon tracker
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/872401
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