TSC defect level in silicon produced by irradiation with muons of GeV-energy

Thermally stimulated current (TSC) measurements on n-type silicon that is irradiated with high energy muons show the introduction of a defect with energy level 0.40 eV and an introduction rate of 0.2 cm/sup -1/. (5 refs).

Detalles Bibliográficos
Autores principales: Heijne, Erik H M, Müller, J C, Siffert, P
Lenguaje:eng
Publicado: 1976
Materias:
Nuclear Physics
Acceso en línea:https://dx.doi.org/10.1080/00337577608233479
http://cds.cern.ch/record/874054
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author Heijne, Erik H M
Müller, J C
Siffert, P
author_facet Heijne, Erik H M
Müller, J C
Siffert, P
author_sort Heijne, Erik H M
collection CERN
description Thermally stimulated current (TSC) measurements on n-type silicon that is irradiated with high energy muons show the introduction of a defect with energy level 0.40 eV and an introduction rate of 0.2 cm/sup -1/. (5 refs).
id cern-874054
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1976
record_format invenio
spelling cern-8740542019-09-30T06:29:59Zdoi:10.1080/00337577608233479http://cds.cern.ch/record/874054engHeijne, Erik H MMüller, J CSiffert, PTSC defect level in silicon produced by irradiation with muons of GeV-energyNuclear PhysicsThermally stimulated current (TSC) measurements on n-type silicon that is irradiated with high energy muons show the introduction of a defect with energy level 0.40 eV and an introduction rate of 0.2 cm/sup -1/. (5 refs).oai:cds.cern.ch:8740541976
spellingShingle Nuclear Physics
Heijne, Erik H M
Müller, J C
Siffert, P
TSC defect level in silicon produced by irradiation with muons of GeV-energy
title TSC defect level in silicon produced by irradiation with muons of GeV-energy
title_full TSC defect level in silicon produced by irradiation with muons of GeV-energy
title_fullStr TSC defect level in silicon produced by irradiation with muons of GeV-energy
title_full_unstemmed TSC defect level in silicon produced by irradiation with muons of GeV-energy
title_short TSC defect level in silicon produced by irradiation with muons of GeV-energy
title_sort tsc defect level in silicon produced by irradiation with muons of gev-energy
topic Nuclear Physics
url https://dx.doi.org/10.1080/00337577608233479
http://cds.cern.ch/record/874054
work_keys_str_mv AT heijneerikhm tscdefectlevelinsiliconproducedbyirradiationwithmuonsofgevenergy
AT mullerjc tscdefectlevelinsiliconproducedbyirradiationwithmuonsofgevenergy
AT siffertp tscdefectlevelinsiliconproducedbyirradiationwithmuonsofgevenergy

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