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TSC defect level in silicon produced by irradiation with muons of GeV-energy
Thermally stimulated current (TSC) measurements on n-type silicon that is irradiated with high energy muons show the introduction of a defect with energy level 0.40 eV and an introduction rate of 0.2 cm/sup -1/. (5 refs).
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
1976
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| Acceso en línea: | https://dx.doi.org/10.1080/00337577608233479 http://cds.cern.ch/record/874054 |