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TSC defect level in silicon produced by irradiation with muons of GeV-energy

Thermally stimulated current (TSC) measurements on n-type silicon that is irradiated with high energy muons show the introduction of a defect with energy level 0.40 eV and an introduction rate of 0.2 cm/sup -1/. (5 refs).

Detalles Bibliográficos
Autores principales:	Heijne, Erik H M, Müller, J C, Siffert, P
Lenguaje:	eng
Publicado:	1976
Materias:	Nuclear Physics
Acceso en línea:	https://dx.doi.org/10.1080/00337577608233479 http://cds.cern.ch/record/874054

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