The use of GaSe semiconductor detectors for monitoring high energy muon beams

GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector...

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Detalles Bibliográficos
Autores principales: Mancini, A M, Manfredotti, C, Murri, R, Quirini, A, Rizzo, A, Vasanelli, L
Lenguaje:eng
Publicado: 1976
Materias:
Nuclear Physics
Acceso en línea:https://dx.doi.org/10.1109/TNS.1976.4328236
http://cds.cern.ch/record/874062
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author Mancini, A M
Manfredotti, C
Murri, R
Quirini, A
Rizzo, A
Vasanelli, L
author_facet Mancini, A M
Manfredotti, C
Murri, R
Quirini, A
Rizzo, A
Vasanelli, L
author_sort Mancini, A M
collection CERN
description GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).
id cern-874062
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1976
record_format invenio
spelling cern-8740622019-09-30T06:29:59Zdoi:10.1109/TNS.1976.4328236http://cds.cern.ch/record/874062engMancini, A MManfredotti, CMurri, RQuirini, ARizzo, AVasanelli, LThe use of GaSe semiconductor detectors for monitoring high energy muon beamsNuclear PhysicsGaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).oai:cds.cern.ch:8740621976
spellingShingle Nuclear Physics
Mancini, A M
Manfredotti, C
Murri, R
Quirini, A
Rizzo, A
Vasanelli, L
The use of GaSe semiconductor detectors for monitoring high energy muon beams
title The use of GaSe semiconductor detectors for monitoring high energy muon beams
title_full The use of GaSe semiconductor detectors for monitoring high energy muon beams
title_fullStr The use of GaSe semiconductor detectors for monitoring high energy muon beams
title_full_unstemmed The use of GaSe semiconductor detectors for monitoring high energy muon beams
title_short The use of GaSe semiconductor detectors for monitoring high energy muon beams
title_sort use of gase semiconductor detectors for monitoring high energy muon beams
topic Nuclear Physics
url https://dx.doi.org/10.1109/TNS.1976.4328236
http://cds.cern.ch/record/874062
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