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A thin all epitaxial silicon detector with internal amplification
An all epitaxial silicon avalanche diode (ESAD) having a total thickness of 36 mu (4*10/sup -4/ radiation lengths) has been fabricated. The design lends itself to the fabrication of thin detectors having an enhanced sensitivity to minimum ionizing particles. The uniformity of gain, signal to noise,...
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| Lenguaje: | eng |
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1976
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| Acceso en línea: | https://dx.doi.org/10.1109/TNS.1976.4328229 http://cds.cern.ch/record/874063 |
| Sumario: | An all epitaxial silicon avalanche diode (ESAD) having a total thickness of 36 mu (4*10/sup -4/ radiation lengths) has been fabricated. The design lends itself to the fabrication of thin detectors having an enhanced sensitivity to minimum ionizing particles. The uniformity of gain, signal to noise, and resolution of the detectors are studied. The response of the detector to minimum ionizing particles is measured. (15 refs). |
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