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A thin all epitaxial silicon detector with internal amplification
An all epitaxial silicon avalanche diode (ESAD) having a total thickness of 36 mu (4*10/sup -4/ radiation lengths) has been fabricated. The design lends itself to the fabrication of thin detectors having an enhanced sensitivity to minimum ionizing particles. The uniformity of gain, signal to noise,...
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| Lenguaje: | eng |
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1976
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| Acceso en línea: | https://dx.doi.org/10.1109/TNS.1976.4328229 http://cds.cern.ch/record/874063 |