Mossbauer study of a complex /sup 119/Sn impurity-defect in gallium phosphide

Reports the experiments utilising the intense secondary radioactive ion beams of the ISOLDE facility at CERN for implantations of /sup 119 /In/sup +/ into GaP single crystals. Impurity-defect structures have been studied by Mossbauer emission spectroscopy on the /sup 119/In daughter, /sup 119/Sn. Sp...

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Detalles Bibliográficos
Autores principales: Weyer, G, Damgaard, S, Heinemeier, J, Petersen, J W
Lenguaje:eng
Publicado: 1980
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1002/pssb.2220980261
http://cds.cern.ch/record/879361
Descripción
Sumario:Reports the experiments utilising the intense secondary radioactive ion beams of the ISOLDE facility at CERN for implantations of /sup 119 /In/sup +/ into GaP single crystals. Impurity-defect structures have been studied by Mossbauer emission spectroscopy on the /sup 119/In daughter, /sup 119/Sn. Spectra measured within 4 min after the implantation and after an annealing of the sample at 255 degrees C for 1 min subsequent to the implantation have been presented. (8 refs).

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