A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature

A geometric model of charge collection has been developed to measure the Lorentz angle in silicon sensors. The model relates the track inclination to the average cluster width. A Lorentz angle of 19.6 plus or minus 0.27-0.5+1.0 degree was measured by fitting the model to cosmic ray data collected wi...

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Detalles Bibliográficos
Autores principales: Johnson, I, Amsler, C, Chiochia, V, Dorokhov, A, Pruys, H S, Regenfus, C, Rochet, J
Lenguaje:eng
Publicado: 2005
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2004.11.019
http://cds.cern.ch/record/903026
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author Johnson, I
Amsler, C
Chiochia, V
Dorokhov, A
Pruys, H S
Regenfus, C
Rochet, J
author_facet Johnson, I
Amsler, C
Chiochia, V
Dorokhov, A
Pruys, H S
Regenfus, C
Rochet, J
author_sort Johnson, I
collection CERN
description A geometric model of charge collection has been developed to measure the Lorentz angle in silicon sensors. The model relates the track inclination to the average cluster width. A Lorentz angle of 19.6 plus or minus 0.27-0.5+1.0 degree was measured by fitting the model to cosmic ray data collected with the double-sided silicon strip sensors of the ATHENA antihydrogen detector. This measurement corresponds to holes drifting in sensors operated at 130 K, in a 3 T magnetic field and with an average internal electric field of 1.3 kV /cm. Comparisons of charge sharing between strips and track residuals for data taken with and without magnetic field are also presented and support this measurement.
id cern-903026
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-9030262019-09-30T06:29:59Zdoi:10.1016/j.nima.2004.11.019http://cds.cern.ch/record/903026engJohnson, IAmsler, CChiochia, VDorokhov, APruys, H SRegenfus, CRochet, JA measurement of the Lorentz angle in silicon strip sensors at cryogenic temperatureDetectors and Experimental TechniquesA geometric model of charge collection has been developed to measure the Lorentz angle in silicon sensors. The model relates the track inclination to the average cluster width. A Lorentz angle of 19.6 plus or minus 0.27-0.5+1.0 degree was measured by fitting the model to cosmic ray data collected with the double-sided silicon strip sensors of the ATHENA antihydrogen detector. This measurement corresponds to holes drifting in sensors operated at 130 K, in a 3 T magnetic field and with an average internal electric field of 1.3 kV /cm. Comparisons of charge sharing between strips and track residuals for data taken with and without magnetic field are also presented and support this measurement.oai:cds.cern.ch:9030262005
spellingShingle Detectors and Experimental Techniques
Johnson, I
Amsler, C
Chiochia, V
Dorokhov, A
Pruys, H S
Regenfus, C
Rochet, J
A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
title A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
title_full A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
title_fullStr A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
title_full_unstemmed A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
title_short A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
title_sort measurement of the lorentz angle in silicon strip sensors at cryogenic temperature
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2004.11.019
http://cds.cern.ch/record/903026
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