Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique

For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge ca...

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Autores principales: Pernegger, H, Eremin, V, Frais-Kölbl, H, Griesmayer, E, Kagan, H, Roe, S, Schnetzer, S, Stone, R, Trischuk, W, Twitchen, D, Weilhammer, Peter, Whitehead, A
Lenguaje:eng
Publicado: 2005
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1063/1.1863417
http://cds.cern.ch/record/909063
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author Pernegger, H
Eremin, V
Frais-Kölbl, H
Griesmayer, E
Kagan, H
Roe, S
Schnetzer, S
Stone, R
Trischuk, W
Twitchen, D
Weilhammer, Peter
Whitehead, A
author_facet Pernegger, H
Eremin, V
Frais-Kölbl, H
Griesmayer, E
Kagan, H
Roe, S
Schnetzer, S
Stone, R
Trischuk, W
Twitchen, D
Weilhammer, Peter
Whitehead, A
author_sort Pernegger, H
collection CERN
description For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an alpha source close to the surface and measuring the induced current in the detector electrodes as a function of time.
id cern-909063
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-9090632019-09-30T06:29:59Zdoi:10.1063/1.1863417http://cds.cern.ch/record/909063engPernegger, HEremin, VFrais-Kölbl, HGriesmayer, EKagan, HRoe, SSchnetzer, SStone, RTrischuk, WTwitchen, DWeilhammer, PeterWhitehead, ACharge-carrier properties in synthetic single-crystal diamond measured with the transient-current techniqueDetectors and Experimental TechniquesFor optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an alpha source close to the surface and measuring the induced current in the detector electrodes as a function of time.oai:cds.cern.ch:9090632005
spellingShingle Detectors and Experimental Techniques
Pernegger, H
Eremin, V
Frais-Kölbl, H
Griesmayer, E
Kagan, H
Roe, S
Schnetzer, S
Stone, R
Trischuk, W
Twitchen, D
Weilhammer, Peter
Whitehead, A
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
title Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
title_full Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
title_fullStr Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
title_full_unstemmed Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
title_short Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
title_sort charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1063/1.1863417
http://cds.cern.ch/record/909063
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