TID and SEU performance of a commercial 013 $\mu$ m CMOS technology

The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing dose (TID) effects, on individual transistors, are evaluated up to 30 Mrd. Single event upset (SEU) sensitivity has been measured on a SRAM with a proton beam.

Detalles Bibliográficos
Autores principales: Hänsler, Kurt, Anelli, G, Baldi, S, Faccio, F, Hajdas, W, Marchioro, A
Lenguaje:eng
Publicado: 2004
Materias:
Health Physics and Radiation Effects
Acceso en línea:http://cds.cern.ch/record/909100
Descripción
Sumario:The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing dose (TID) effects, on individual transistors, are evaluated up to 30 Mrd. Single event upset (SEU) sensitivity has been measured on a SRAM with a proton beam.

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