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The angular dependence of an Si energy deposition spectrometer response at several radiation sources

An MDU-Liulin spectrometer based on an Si-diode was mainly used during the last few years with the goal to use them for measurements onboard aircraft. To investigate its ability to obtain such measurements, the detector was tested in some radiation reference fields, like /sup 60/Co and other photon...

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Detalles Bibliográficos
Autores principales: Spurny, F, Bottollier-Depois, J F, Trompier, F
Lenguaje:eng
Publicado: 2005
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.radmeas.2004.06.009
http://cds.cern.ch/record/912961
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author Spurny, F
Bottollier-Depois, J F
Trompier, F
author_facet Spurny, F
Bottollier-Depois, J F
Trompier, F
author_sort Spurny, F
collection CERN
description An MDU-Liulin spectrometer based on an Si-diode was mainly used during the last few years with the goal to use them for measurements onboard aircraft. To investigate its ability to obtain such measurements, the detector was tested in some radiation reference fields, like /sup 60/Co and other photon beams, neutrons of an AmBe and /sup 252/Cf sources and in high-energy radiation fields at CERN. Due to the high geometrical asymmetry of the Si-diode semiconductor, an angular dependence of the response would be expected. This work presents analyses and discusses the results of angular dependence studies obtained at the different radiation sources mentioned. It was found that these angular dependences vary with the type and energy of radiation. The influence of these variations on the use as a dosimeter onboard aircraft is also studied and discussed.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
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spelling cern-9129612019-09-30T06:29:59Zdoi:10.1016/j.radmeas.2004.06.009http://cds.cern.ch/record/912961engSpurny, FBottollier-Depois, J FTrompier, FThe angular dependence of an Si energy deposition spectrometer response at several radiation sourcesHealth Physics and Radiation EffectsAn MDU-Liulin spectrometer based on an Si-diode was mainly used during the last few years with the goal to use them for measurements onboard aircraft. To investigate its ability to obtain such measurements, the detector was tested in some radiation reference fields, like /sup 60/Co and other photon beams, neutrons of an AmBe and /sup 252/Cf sources and in high-energy radiation fields at CERN. Due to the high geometrical asymmetry of the Si-diode semiconductor, an angular dependence of the response would be expected. This work presents analyses and discusses the results of angular dependence studies obtained at the different radiation sources mentioned. It was found that these angular dependences vary with the type and energy of radiation. The influence of these variations on the use as a dosimeter onboard aircraft is also studied and discussed.oai:cds.cern.ch:9129612005
spellingShingle Health Physics and Radiation Effects
Spurny, F
Bottollier-Depois, J F
Trompier, F
The angular dependence of an Si energy deposition spectrometer response at several radiation sources
title The angular dependence of an Si energy deposition spectrometer response at several radiation sources
title_full The angular dependence of an Si energy deposition spectrometer response at several radiation sources
title_fullStr The angular dependence of an Si energy deposition spectrometer response at several radiation sources
title_full_unstemmed The angular dependence of an Si energy deposition spectrometer response at several radiation sources
title_short The angular dependence of an Si energy deposition spectrometer response at several radiation sources
title_sort angular dependence of an si energy deposition spectrometer response at several radiation sources
topic Health Physics and Radiation Effects
url https://dx.doi.org/10.1016/j.radmeas.2004.06.009
http://cds.cern.ch/record/912961
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