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Fast CMOS binary front-end for silicon strip detectors at LHC experiments
We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance...
Autores principales: | , |
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Lenguaje: | eng |
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2004
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Acceso en línea: | http://cds.cern.ch/record/914478 |
_version_ | 1780908971973935104 |
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author | Kaplon, Jan Dabrowski, Wladyslaw |
author_facet | Kaplon, Jan Dabrowski, Wladyslaw |
author_sort | Kaplon, Jan |
collection | CERN |
description | We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms. |
id | cern-914478 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2004 |
record_format | invenio |
spelling | cern-9144782019-09-30T06:29:59Zhttp://cds.cern.ch/record/914478engKaplon, JanDabrowski, WladyslawFast CMOS binary front-end for silicon strip detectors at LHC experimentsDetectors and Experimental TechniquesWe present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.oai:cds.cern.ch:9144782004 |
spellingShingle | Detectors and Experimental Techniques Kaplon, Jan Dabrowski, Wladyslaw Fast CMOS binary front-end for silicon strip detectors at LHC experiments |
title | Fast CMOS binary front-end for silicon strip detectors at LHC experiments |
title_full | Fast CMOS binary front-end for silicon strip detectors at LHC experiments |
title_fullStr | Fast CMOS binary front-end for silicon strip detectors at LHC experiments |
title_full_unstemmed | Fast CMOS binary front-end for silicon strip detectors at LHC experiments |
title_short | Fast CMOS binary front-end for silicon strip detectors at LHC experiments |
title_sort | fast cmos binary front-end for silicon strip detectors at lhc experiments |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/914478 |
work_keys_str_mv | AT kaplonjan fastcmosbinaryfrontendforsiliconstripdetectorsatlhcexperiments AT dabrowskiwladyslaw fastcmosbinaryfrontendforsiliconstripdetectorsatlhcexperiments |