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Fast CMOS binary front-end for silicon strip detectors at LHC experiments

We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance...

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Detalles Bibliográficos
Autores principales: Kaplon, Jan, Dabrowski, Wladyslaw
Lenguaje:eng
Publicado: 2004
Materias:
Acceso en línea:http://cds.cern.ch/record/914478
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author Kaplon, Jan
Dabrowski, Wladyslaw
author_facet Kaplon, Jan
Dabrowski, Wladyslaw
author_sort Kaplon, Jan
collection CERN
description We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
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spelling cern-9144782019-09-30T06:29:59Zhttp://cds.cern.ch/record/914478engKaplon, JanDabrowski, WladyslawFast CMOS binary front-end for silicon strip detectors at LHC experimentsDetectors and Experimental TechniquesWe present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.oai:cds.cern.ch:9144782004
spellingShingle Detectors and Experimental Techniques
Kaplon, Jan
Dabrowski, Wladyslaw
Fast CMOS binary front-end for silicon strip detectors at LHC experiments
title Fast CMOS binary front-end for silicon strip detectors at LHC experiments
title_full Fast CMOS binary front-end for silicon strip detectors at LHC experiments
title_fullStr Fast CMOS binary front-end for silicon strip detectors at LHC experiments
title_full_unstemmed Fast CMOS binary front-end for silicon strip detectors at LHC experiments
title_short Fast CMOS binary front-end for silicon strip detectors at LHC experiments
title_sort fast cmos binary front-end for silicon strip detectors at lhc experiments
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/914478
work_keys_str_mv AT kaplonjan fastcmosbinaryfrontendforsiliconstripdetectorsatlhcexperiments
AT dabrowskiwladyslaw fastcmosbinaryfrontendforsiliconstripdetectorsatlhcexperiments