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Simulation of signals in ultra radiation-hard silicon pixel detectors
A detailed simulation of silicon pixel detectors irradiated to very high fluences, in the range foreseen for vertex detectors after the Large Hadron Collider luminosity upgrade, is presented. The charge collection properties and the detector response were computed for different silicon materials (st...
Autores principales: | , |
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Lenguaje: | eng |
Publicado: |
2004
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/NSSMIC.2004.1462354 http://cds.cern.ch/record/915982 |