Annealing Studies of magnetic Czochralski silicon radiation detectors

Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. Diodes were characterized by...

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Detalles Bibliográficos
Autores principales: Pellegrini, G, Campabadal, F, Fleta, C, Lozano, M, Rafí, J M, Ullán, M
Lenguaje:eng
Publicado: 2005
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2005.06.002
http://cds.cern.ch/record/921714
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author Pellegrini, G
Campabadal, F
Fleta, C
Lozano, M
Rafí, J M
Ullán, M
author_facet Pellegrini, G
Campabadal, F
Fleta, C
Lozano, M
Rafí, J M
Ullán, M
author_sort Pellegrini, G
collection CERN
description Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. Diodes were characterized by reverse current and capacitance measurements before and after irradiations. The MCZ diodes were irradiated in a 24 GeV proton beam at CERN PS facilities and their annealing behavior with time was compared to that shown by oxygenated FZ diodes processed in the same way. FZ and MCZ diodes were irradiated up to fluences of 1016 p/cm2 which corresponds to the maximum fluence foreseen in the inner part of the future ATLAS upgrade in view of a Super-LHC with an increase in the luminosity.
id cern-921714
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-9217142019-09-30T06:29:59Zdoi:10.1016/j.nima.2005.06.002http://cds.cern.ch/record/921714engPellegrini, GCampabadal, FFleta, CLozano, MRafí, J MUllán, MAnnealing Studies of magnetic Czochralski silicon radiation detectorsDetectors and Experimental TechniquesSilicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. Diodes were characterized by reverse current and capacitance measurements before and after irradiations. The MCZ diodes were irradiated in a 24 GeV proton beam at CERN PS facilities and their annealing behavior with time was compared to that shown by oxygenated FZ diodes processed in the same way. FZ and MCZ diodes were irradiated up to fluences of 1016 p/cm2 which corresponds to the maximum fluence foreseen in the inner part of the future ATLAS upgrade in view of a Super-LHC with an increase in the luminosity.oai:cds.cern.ch:9217142005
spellingShingle Detectors and Experimental Techniques
Pellegrini, G
Campabadal, F
Fleta, C
Lozano, M
Rafí, J M
Ullán, M
Annealing Studies of magnetic Czochralski silicon radiation detectors
title Annealing Studies of magnetic Czochralski silicon radiation detectors
title_full Annealing Studies of magnetic Czochralski silicon radiation detectors
title_fullStr Annealing Studies of magnetic Czochralski silicon radiation detectors
title_full_unstemmed Annealing Studies of magnetic Czochralski silicon radiation detectors
title_short Annealing Studies of magnetic Czochralski silicon radiation detectors
title_sort annealing studies of magnetic czochralski silicon radiation detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2005.06.002
http://cds.cern.ch/record/921714
work_keys_str_mv AT pellegrinig annealingstudiesofmagneticczochralskisiliconradiationdetectors
AT campabadalf annealingstudiesofmagneticczochralskisiliconradiationdetectors
AT fletac annealingstudiesofmagneticczochralskisiliconradiationdetectors
AT lozanom annealingstudiesofmagneticczochralskisiliconradiationdetectors
AT rafijm annealingstudiesofmagneticczochralskisiliconradiationdetectors
AT ullanm annealingstudiesofmagneticczochralskisiliconradiationdetectors

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