Cargando…
Annealing Studies of magnetic Czochralski silicon radiation detectors
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. Diodes were characterized by...
Autores principales: | Pellegrini, G, Campabadal, F, Fleta, C, Lozano, M, Rafí, J M, Ullán, M |
---|---|
Lenguaje: | eng |
Publicado: |
2005
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.06.002 http://cds.cern.ch/record/921714 |
Ejemplares similares
-
Characterization of magnetic Czochralski silicon radiation detectors
por: Pellegrini, G, et al.
Publicado: (2005) -
Technology development of p-type microstrip detectors with radiation hard p-spray isolation
por: Pellegrini, G, et al.
Publicado: (2006) -
Czochralski silicon radiation detectors
por: Bates, A G
Publicado: (2006) -
Magnetic Czochralski silicon as detector material
por: Härkönen, J, et al.
Publicado: (2007) -
Characterization of Czochralski Silicon Detectors
por: Luukka, Panja-Riina
Publicado: (2012)