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Radiation damage effects in the NA60 silicon pixel detectors

The NA60 experiment studies open charm and prompt dimuon production in proton–nucleus and nucleus–nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 200...

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Detalles Bibliográficos
Autores principales: Keil, M, Banicz, K, Floris, M, Heuser, J M, Lourenço, C, Ohnishi, H, Ohnishi, E, Usai, G
Lenguaje:eng
Publicado: 2005
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2005.06.038
http://cds.cern.ch/record/921919
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author Keil, M
Banicz, K
Floris, M
Heuser, J M
Lourenço, C
Ohnishi, H
Ohnishi, E
Usai, G
author_facet Keil, M
Banicz, K
Floris, M
Heuser, J M
Lourenço, C
Ohnishi, H
Ohnishi, E
Usai, G
author_sort Keil, M
collection CERN
description The NA60 experiment studies open charm and prompt dimuon production in proton–nucleus and nucleus–nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 2003 data taking period with indium–indium collisions a significant radiation dose was collected. Simulations done before the run predicted a fluence of up to several in the most affected regions of the sensors and a difference of approximately a factor ten between the inner and outer regions of certain sensor chips. The inhomogeneous distribution of the fluence leads to type inversion in some regions of the sensors while other regions of the same sensors kept their initial behaviour. The depletion voltages and leakage currents were measured during the run and have been compared with the estimates we had previously made. This paper shows simulation results of fluence and radiation damage and comparisons with the measurements performed throughout the data taking period.
id cern-921919
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-9219192019-09-30T06:29:59Zdoi:10.1016/j.nima.2005.06.038http://cds.cern.ch/record/921919engKeil, MBanicz, KFloris, MHeuser, J MLourenço, COhnishi, HOhnishi, EUsai, GRadiation damage effects in the NA60 silicon pixel detectorsDetectors and Experimental TechniquesThe NA60 experiment studies open charm and prompt dimuon production in proton–nucleus and nucleus–nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 2003 data taking period with indium–indium collisions a significant radiation dose was collected. Simulations done before the run predicted a fluence of up to several in the most affected regions of the sensors and a difference of approximately a factor ten between the inner and outer regions of certain sensor chips. The inhomogeneous distribution of the fluence leads to type inversion in some regions of the sensors while other regions of the same sensors kept their initial behaviour. The depletion voltages and leakage currents were measured during the run and have been compared with the estimates we had previously made. This paper shows simulation results of fluence and radiation damage and comparisons with the measurements performed throughout the data taking period.oai:cds.cern.ch:9219192005
spellingShingle Detectors and Experimental Techniques
Keil, M
Banicz, K
Floris, M
Heuser, J M
Lourenço, C
Ohnishi, H
Ohnishi, E
Usai, G
Radiation damage effects in the NA60 silicon pixel detectors
title Radiation damage effects in the NA60 silicon pixel detectors
title_full Radiation damage effects in the NA60 silicon pixel detectors
title_fullStr Radiation damage effects in the NA60 silicon pixel detectors
title_full_unstemmed Radiation damage effects in the NA60 silicon pixel detectors
title_short Radiation damage effects in the NA60 silicon pixel detectors
title_sort radiation damage effects in the na60 silicon pixel detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2005.06.038
http://cds.cern.ch/record/921919
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AT lourencoc radiationdamageeffectsinthena60siliconpixeldetectors
AT ohnishih radiationdamageeffectsinthena60siliconpixeldetectors
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