Sensor Simulation and position calibration for the CMS pixel detector

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charg...

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Detalles Bibliográficos
Autores principales: Chiochia, V., Alagoz, E., Swartz, M.
Lenguaje:eng
Publicado: 2006
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2006.09.024
http://cds.cern.ch/record/937445
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author Chiochia, V.
Alagoz, E.
Swartz, M.
author_facet Chiochia, V.
Alagoz, E.
Swartz, M.
author_sort Chiochia, V.
collection CERN
description In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.
id cern-937445
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2006
record_format invenio
spelling cern-9374452023-03-14T20:07:18Zdoi:10.1016/j.nima.2006.09.024http://cds.cern.ch/record/937445engChiochia, V.Alagoz, E.Swartz, M.Sensor Simulation and position calibration for the CMS pixel detectorOther Fields of PhysicsIn this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.physics/0603192oai:cds.cern.ch:9374452006-03-23
spellingShingle Other Fields of Physics
Chiochia, V.
Alagoz, E.
Swartz, M.
Sensor Simulation and position calibration for the CMS pixel detector
title Sensor Simulation and position calibration for the CMS pixel detector
title_full Sensor Simulation and position calibration for the CMS pixel detector
title_fullStr Sensor Simulation and position calibration for the CMS pixel detector
title_full_unstemmed Sensor Simulation and position calibration for the CMS pixel detector
title_short Sensor Simulation and position calibration for the CMS pixel detector
title_sort sensor simulation and position calibration for the cms pixel detector
topic Other Fields of Physics
url https://dx.doi.org/10.1016/j.nima.2006.09.024
http://cds.cern.ch/record/937445
work_keys_str_mv AT chiochiav sensorsimulationandpositioncalibrationforthecmspixeldetector
AT alagoze sensorsimulationandpositioncalibrationforthecmspixeldetector
AT swartzm sensorsimulationandpositioncalibrationforthecmspixeldetector

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