Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a...

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Detalles Bibliográficos
Autores principales: Swartz, M., Kim, D., Chiochia, V., Allkofer, Y., Amsler, Claude, Regenfus, Christian, Speer, T., Dorokhov, A., Hormann, C., Prokofiev, Kirill, Kotlinski, D., Rohe, T., Bortoletto, D., Son, S., Cucciarelli, S., Konecki, M., Cremaldi, L., Sander, D.A.
Lenguaje:eng
Publicado: 2006
Materias:
Other Fields of Physics
Acceso en línea:http://cds.cern.ch/record/952865

Internet

http://cds.cern.ch/record/952865

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