Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a...

Descripción completa

Detalles Bibliográficos
Autores principales: Swartz, M., Kim, D., Chiochia, V., Allkofer, Y., Amsler, Claude, Regenfus, Christian, Speer, T., Dorokhov, A., Hormann, C., Prokofiev, Kirill, Kotlinski, D., Rohe, T., Bortoletto, D., Son, S., Cucciarelli, S., Konecki, M., Cremaldi, L., Sander, D.A.
Lenguaje:eng
Publicado: 2006
Materias:
Other Fields of Physics
Acceso en línea:http://cds.cern.ch/record/952865

Ejemplares similares

Ejemplares similares