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Prediction of the Thermal Annealing of Thick Oxide Metal-Oxide-Semiconductor Dosimeters Irradiated in a Harsh Radiation Environment
Radiation-sensing MOSFET transistors produced by the laboratory LAAS-CNRS were exposed to a harsh hadron field that represents the real radiation environment expected at the CERN Large Hadron Collider Experiments. The long-term stability of the transistor's Ids-Vgs characteristic was investigat...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2006
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.2337084 http://cds.cern.ch/record/968744 |