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Direct evidence for As as a Zn-site impurity in ZnO
Arsenic has been reported in the literature as one of the few p-type dopants in the technologically promising II-VI semiconductor ZnO. However, there is an ongoing debate whether the p-type character is due to As simply replacing O atoms or to the formation of more complicated defect complexes, poss...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1103/PhysRevLett.95.215503 http://cds.cern.ch/record/985355 |
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