Recent emission channeling studies in wide band gap semiconductors

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga an...

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Detalles Bibliográficos
Autores principales: Wahl, Ulrich, Correia, J G, Rita, E, Alves, E, Carvalho-Soares, João, De Vries, Bart, Matias, V, Vantomme, A
Lenguaje:eng
Publicado: 2004
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1007/s10751-005-9125-0
http://cds.cern.ch/record/985888
Descripción
Sumario:We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.

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