Recent emission channeling studies in wide band gap semiconductors

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga an...

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Detalles Bibliográficos
Autores principales: Wahl, Ulrich, Correia, J G, Rita, E, Alves, E, Carvalho-Soares, João, De Vries, Bart, Matias, V, Vantomme, A
Lenguaje:eng
Publicado: 2004
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1007/s10751-005-9125-0
http://cds.cern.ch/record/985888
_version_ 1780911224982077440
author Wahl, Ulrich
Correia, J G
Rita, E
Alves, E
Carvalho-Soares, João
De Vries, Bart
Matias, V
Vantomme, A
author_facet Wahl, Ulrich
Correia, J G
Rita, E
Alves, E
Carvalho-Soares, João
De Vries, Bart
Matias, V
Vantomme, A
author_sort Wahl, Ulrich
collection CERN
description We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.
id cern-985888
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling cern-9858882019-09-30T06:29:59Zdoi:10.1007/s10751-005-9125-0http://cds.cern.ch/record/985888engWahl, UlrichCorreia, J GRita, EAlves, ECarvalho-Soares, JoãoDe Vries, BartMatias, VVantomme, ARecent emission channeling studies in wide band gap semiconductorsCondensed MatterWe present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.CERN-OPEN-2006-047oai:cds.cern.ch:9858882004-10-13
spellingShingle Condensed Matter
Wahl, Ulrich
Correia, J G
Rita, E
Alves, E
Carvalho-Soares, João
De Vries, Bart
Matias, V
Vantomme, A
Recent emission channeling studies in wide band gap semiconductors
title Recent emission channeling studies in wide band gap semiconductors
title_full Recent emission channeling studies in wide band gap semiconductors
title_fullStr Recent emission channeling studies in wide band gap semiconductors
title_full_unstemmed Recent emission channeling studies in wide band gap semiconductors
title_short Recent emission channeling studies in wide band gap semiconductors
title_sort recent emission channeling studies in wide band gap semiconductors
topic Condensed Matter
url https://dx.doi.org/10.1007/s10751-005-9125-0
http://cds.cern.ch/record/985888
work_keys_str_mv AT wahlulrich recentemissionchannelingstudiesinwidebandgapsemiconductors
AT correiajg recentemissionchannelingstudiesinwidebandgapsemiconductors
AT ritae recentemissionchannelingstudiesinwidebandgapsemiconductors
AT alvese recentemissionchannelingstudiesinwidebandgapsemiconductors
AT carvalhosoaresjoao recentemissionchannelingstudiesinwidebandgapsemiconductors
AT devriesbart recentemissionchannelingstudiesinwidebandgapsemiconductors
AT matiasv recentemissionchannelingstudiesinwidebandgapsemiconductors
AT vantommea recentemissionchannelingstudiesinwidebandgapsemiconductors

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