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Recent emission channeling studies in wide band gap semiconductors
We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga an...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/s10751-005-9125-0 http://cds.cern.ch/record/985888 |