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Operational voltage of silicon heavily irradiated strip detectors utilizing avalanche multiplication effect

Recent results on the collected charge $Q_c$ in heavily irradiated Si strip detectors developed by RD50 collaboration for the high luminosity operation of the LHC (sLHC) showed a significant $Q_c$ enhancement if the detectors were operated at a bias voltage beyond 1000 V. To explain these results, a...

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Detalles Bibliográficos
Autores principales: Verbitskaya, E, Eremin, V, Zabrodskii, A
Lenguaje:eng
Publicado: 2012
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/7/02/C02061
http://cds.cern.ch/record/2634745