Recent advances in the development of radiation tolerant silicon detectors for the super-LHC

For the luminosity upgrade of the LHC, the sLHC, the tracking systems of the experiments need to be replaced. A main concern is the extreme radiation hardness requirements of up to a 1 MeV neutron equivalent fluence of about $10^{16}\rm{cm}^{-2}$. In this paper recent results on radiation hardening technologies developed within the RD50 Collaboration are described. Silicon detectors have been designed and produced on n- and p-type wafers made by Float Zone, epitaxy and Czochralski technology. Their charge collection efficiency after proton, neutron and mixed irradiation has been studied. Novel detector concepts, as 3D detectors, have been designed, produced and studied as well. Radiation induced microscopic defects have been investigated and could be partly linked to the performance degradation of irradiated detectors.