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Impact of Irradiations by Protons with different Energies on Silicon Sensors
In the frame of the CMS tracker upgrade campaign the radiation damage of oxygen- rich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between $1 \times 10^{1...
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| Lenguaje: | eng |
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2018
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| Acceso en línea: | http://cds.cern.ch/record/2636089 |