A charge collection study with dedicated RD50 charge multiplication sensors

We investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Charge collection measurements are performed before and after proton and neutron irradiation to fluences of $1 \times 10^{15}$ and $5 \times 10^{15} \ 1 \ \rm{MeV} \ n_{eq}/cm^2$. Charge multiplication structures on these devices include varying diffusion times and energies for the implantation process, different sensor thicknesses, and several different strip width and pitch geometries. The charge collection for the charge multiplication devices is compared to standard silicon strip sensors with no charge multiplication properties.