A charge collection study with dedicated RD50 charge multiplication sensors

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We investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Charge collection measurements are performed before and after proton and neutron irradiation to flue...

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Detalles Bibliográficos
Autores principales: Betancourt, C, Barber, T, Hauser, M, Jakobs, K, Kuehn, S, ParzefaIl, U, Wonsak, S
Lenguaje:eng
Publicado: 2012
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/NSSMIC.2012.6551393
http://cds.cern.ch/record/2634241
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author Betancourt, C
Barber, T
Hauser, M
Jakobs, K
Kuehn, S
ParzefaIl, U
Wonsak, S
author_facet Betancourt, C
Barber, T
Hauser, M
Jakobs, K
Kuehn, S
ParzefaIl, U
Wonsak, S
author_sort Betancourt, C
collection CERN
description We investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Charge collection measurements are performed before and after proton and neutron irradiation to fluences of $1 \times 10^{15}$ and $5 \times 10^{15} \ 1 \ \rm{MeV} \ n_{eq}/cm^2$. Charge multiplication structures on these devices include varying diffusion times and energies for the implantation process, different sensor thicknesses, and several different strip width and pitch geometries. The charge collection for the charge multiplication devices is compared to standard silicon strip sensors with no charge multiplication properties.
id oai-inspirehep.net-1324680
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2012
record_format invenio
spelling oai-inspirehep.net-13246802019-09-30T06:29:59Zdoi:10.1109/NSSMIC.2012.6551393http://cds.cern.ch/record/2634241engBetancourt, CBarber, THauser, MJakobs, KKuehn, SParzefaIl, UWonsak, SA charge collection study with dedicated RD50 charge multiplication sensorsDetectors and Experimental TechniquesWe investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Charge collection measurements are performed before and after proton and neutron irradiation to fluences of $1 \times 10^{15}$ and $5 \times 10^{15} \ 1 \ \rm{MeV} \ n_{eq}/cm^2$. Charge multiplication structures on these devices include varying diffusion times and energies for the implantation process, different sensor thicknesses, and several different strip width and pitch geometries. The charge collection for the charge multiplication devices is compared to standard silicon strip sensors with no charge multiplication properties.oai:inspirehep.net:13246802012
spellingShingle Detectors and Experimental Techniques
Betancourt, C
Barber, T
Hauser, M
Jakobs, K
Kuehn, S
ParzefaIl, U
Wonsak, S
A charge collection study with dedicated RD50 charge multiplication sensors
title A charge collection study with dedicated RD50 charge multiplication sensors
title_full A charge collection study with dedicated RD50 charge multiplication sensors
title_fullStr A charge collection study with dedicated RD50 charge multiplication sensors
title_full_unstemmed A charge collection study with dedicated RD50 charge multiplication sensors
title_short A charge collection study with dedicated RD50 charge multiplication sensors
title_sort charge collection study with dedicated rd50 charge multiplication sensors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/NSSMIC.2012.6551393
http://cds.cern.ch/record/2634241
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