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Probing active-edge silicon sensors using a high precision telescope
The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assemble...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2015
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2014.12.069 http://cds.cern.ch/record/2153718 |
_version_ | 1780950642962989056 |
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author | Akiba, K Artuso, M van Beveren, V van Beuzekom, M Boterenbrood, H Buytaert, J Collins, P Dumps, R van der Heijden, B Hombach, C Hynds, D Hsu, D John, M Koffeman, E Leflat, A Li, Y Longstaff, I Morton, A Pérez Trigo, E Plackett, R Reid, M M Rodríguez Perez, P Schindler, H Tsopelas, P Vázquez Sierra, C Wysokiński, M |
author_facet | Akiba, K Artuso, M van Beveren, V van Beuzekom, M Boterenbrood, H Buytaert, J Collins, P Dumps, R van der Heijden, B Hombach, C Hynds, D Hsu, D John, M Koffeman, E Leflat, A Li, Y Longstaff, I Morton, A Pérez Trigo, E Plackett, R Reid, M M Rodríguez Perez, P Schindler, H Tsopelas, P Vázquez Sierra, C Wysokiński, M |
author_sort | Akiba, K |
collection | CERN |
description | The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge. |
id | oai-inspirehep.net-1341534 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2015 |
record_format | invenio |
spelling | oai-inspirehep.net-13415342022-08-10T13:07:20Zdoi:10.1016/j.nima.2014.12.069http://cds.cern.ch/record/2153718engAkiba, KArtuso, Mvan Beveren, Vvan Beuzekom, MBoterenbrood, HBuytaert, JCollins, PDumps, Rvan der Heijden, BHombach, CHynds, DHsu, DJohn, MKoffeman, ELeflat, ALi, YLongstaff, IMorton, APérez Trigo, EPlackett, RReid, M MRodríguez Perez, PSchindler, HTsopelas, PVázquez Sierra, CWysokiński, MProbing active-edge silicon sensors using a high precision telescopeDetectors and Experimental TechniquesThe performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge.oai:inspirehep.net:13415342015 |
spellingShingle | Detectors and Experimental Techniques Akiba, K Artuso, M van Beveren, V van Beuzekom, M Boterenbrood, H Buytaert, J Collins, P Dumps, R van der Heijden, B Hombach, C Hynds, D Hsu, D John, M Koffeman, E Leflat, A Li, Y Longstaff, I Morton, A Pérez Trigo, E Plackett, R Reid, M M Rodríguez Perez, P Schindler, H Tsopelas, P Vázquez Sierra, C Wysokiński, M Probing active-edge silicon sensors using a high precision telescope |
title | Probing active-edge silicon sensors using a high precision telescope |
title_full | Probing active-edge silicon sensors using a high precision telescope |
title_fullStr | Probing active-edge silicon sensors using a high precision telescope |
title_full_unstemmed | Probing active-edge silicon sensors using a high precision telescope |
title_short | Probing active-edge silicon sensors using a high precision telescope |
title_sort | probing active-edge silicon sensors using a high precision telescope |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1016/j.nima.2014.12.069 http://cds.cern.ch/record/2153718 |
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