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A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications

The GigaBit Laser Driver (GBLD) is a key on-detector component of the GigaBit Transceiver (GBT) system at the transmitter side. As part of the design efforts towards the upgrade of the electrical components of the LHC experiments, a 10 Gb/s GBLD (GBLD10) has been developed in a 130 nm CMOS technolog...

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Detalles Bibliográficos
Autores principales: Zhang, T, Tavernier, F, Moreira, P, Gui, P
Lenguaje:eng
Publicado: 2015
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/10/02/C02036
http://cds.cern.ch/record/2158951
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author Zhang, T
Tavernier, F
Moreira, P
Gui, P
author_facet Zhang, T
Tavernier, F
Moreira, P
Gui, P
author_sort Zhang, T
collection CERN
description The GigaBit Laser Driver (GBLD) is a key on-detector component of the GigaBit Transceiver (GBT) system at the transmitter side. As part of the design efforts towards the upgrade of the electrical components of the LHC experiments, a 10 Gb/s GBLD (GBLD10) has been developed in a 130 nm CMOS technology. The GBLD10 is based on the distributed-amplifier (DA) architecture and achieves data rates up to 10 Gb/s. It is capable of driving VCSELs with modulation currents up to 12 mA. Moreover, a pre-emphasis function has been included in the proposed laser driver in order to compensate for the capacitive load and channel losses.
id oai-inspirehep.net-1346088
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling oai-inspirehep.net-13460882019-09-30T06:29:59Zdoi:10.1088/1748-0221/10/02/C02036http://cds.cern.ch/record/2158951engZhang, TTavernier, FMoreira, PGui, PA 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applicationsDetectors and Experimental TechniquesThe GigaBit Laser Driver (GBLD) is a key on-detector component of the GigaBit Transceiver (GBT) system at the transmitter side. As part of the design efforts towards the upgrade of the electrical components of the LHC experiments, a 10 Gb/s GBLD (GBLD10) has been developed in a 130 nm CMOS technology. The GBLD10 is based on the distributed-amplifier (DA) architecture and achieves data rates up to 10 Gb/s. It is capable of driving VCSELs with modulation currents up to 12 mA. Moreover, a pre-emphasis function has been included in the proposed laser driver in order to compensate for the capacitive load and channel losses.oai:inspirehep.net:13460882015
spellingShingle Detectors and Experimental Techniques
Zhang, T
Tavernier, F
Moreira, P
Gui, P
A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications
title A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications
title_full A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications
title_fullStr A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications
title_full_unstemmed A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications
title_short A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications
title_sort 10 gb/s laser driver in 130 nm cmos technology for high energy physics applications
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/10/02/C02036
http://cds.cern.ch/record/2158951
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