Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade

The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluati...

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Detalles Bibliográficos
Autores principales: Mikeštíková, Marcela, Kodek, Zdeněk, Št'astný, Jan
Lenguaje:eng
Publicado: SISSA 2015
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.22323/1.227.0050
http://cds.cern.ch/record/2159069
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author Mikeštíková, Marcela
Kodek, Zdeněk
Št'astný, Jan
author_facet Mikeštíková, Marcela
Kodek, Zdeněk
Št'astný, Jan
author_sort Mikeštíková, Marcela
collection CERN
description The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure. It was verified that different geometries of end-cap sensors do not influence their stability; the sensors should provide acceptable strip isolation and n ew gate PTP structure functions well even at the highest tested proton fluence 2× 10 15 n eq / cm 2
id oai-inspirehep.net-1373032
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
publisher SISSA
record_format invenio
spelling oai-inspirehep.net-13730322019-10-15T15:22:10Zdoi:10.22323/1.227.0050http://cds.cern.ch/record/2159069engMikeštíková, MarcelaKodek, ZdeněkŠt'astný, JanEvaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS UpgradeDetectors and Experimental TechniquesThe electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure. It was verified that different geometries of end-cap sensors do not influence their stability; the sensors should provide acceptable strip isolation and n ew gate PTP structure functions well even at the highest tested proton fluence 2× 10 15 n eq / cm 2SISSAoai:inspirehep.net:13730322015
spellingShingle Detectors and Experimental Techniques
Mikeštíková, Marcela
Kodek, Zdeněk
Št'astný, Jan
Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade
title Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade
title_full Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade
title_fullStr Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade
title_full_unstemmed Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade
title_short Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade
title_sort evaluation of bulk and surface radiation damage of silicon sensors for the atlas upgrade
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.22323/1.227.0050
http://cds.cern.ch/record/2159069
work_keys_str_mv AT mikestikovamarcela evaluationofbulkandsurfaceradiationdamageofsiliconsensorsfortheatlasupgrade
AT kodekzdenek evaluationofbulkandsurfaceradiationdamageofsiliconsensorsfortheatlasupgrade
AT stastnyjan evaluationofbulkandsurfaceradiationdamageofsiliconsensorsfortheatlasupgrade

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