Cargando…
Radiation hardness of a 180 nm SOI monolithic active pixel sensor
The use of Silicon-on-Insulator (SOI) technology as a particle detector in a high radiation environment is, at present, limited mostly by radiation effects on the transistor characteristics, back gate effect, and mutual coupling between the Buried Oxide (BOX) and the sensor. We have fabricated and t...
| Autores principales: | , , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2015
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2015.02.066 http://cds.cern.ch/record/2159144 |