First measurements of segmented silicon tracking detectors with built-in multiplication layer

Silicon sensors with a built-in multiplication layer, also known as Low Gain Avalanche Detectors (LGAD), are a new technology of potentially radiation hard silicon sensors developed at CNM (Centro Nacional de Microelectrónica) in the framework of the CERN-RD50 collaboration. The concept of the LGAD technology is to produce a tracking sensor with an intrinsic low gain due to charge multiplication in order to enhance the signal-to-noise ratio. This makes LGAD detectors appealing for the high energy physics community which foresees a possible application in harsh radiation environments such as the inner detectors of the experiments at the High Luminosity LHC, where a fluence of 2×10 16 n eq /cm 2 is expected in the innermost pixel layer of the tracker.