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Radiation hard semiconductor devices for very high luminosity colliders
The next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&...
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Lenguaje: | eng |
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SISSA
2015
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Acceso en línea: | https://dx.doi.org/10.22323/1.254.0032 http://cds.cern.ch/record/2634246 |
_version_ | 1780959723425628160 |
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author | Baselga Bacardit, Marta |
author_facet | Baselga Bacardit, Marta |
author_sort | Baselga Bacardit, Marta |
collection | CERN |
description | The next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&D; collaboration devoted to develop radiation hard silicon detectors for the HL-LHC. The collaboration explores different research fields structured in different areas: defect and material characterization explores the macroscopic properties of materials before and after irradiation, detector characterization tests the devices with different techniques, new detector structures developes new devices such as Low Gain Avalanche Detectors (LGAD) or 3D detectors and full detector systems integrates the electronic to the detector and studies the performance under high fluences. |
id | oai-inspirehep.net-1413635 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2015 |
publisher | SISSA |
record_format | invenio |
spelling | oai-inspirehep.net-14136352019-10-15T15:28:04Zdoi:10.22323/1.254.0032http://cds.cern.ch/record/2634246engBaselga Bacardit, MartaRadiation hard semiconductor devices for very high luminosity collidersDetectors and Experimental TechniquesThe next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&D; collaboration devoted to develop radiation hard silicon detectors for the HL-LHC. The collaboration explores different research fields structured in different areas: defect and material characterization explores the macroscopic properties of materials before and after irradiation, detector characterization tests the devices with different techniques, new detector structures developes new devices such as Low Gain Avalanche Detectors (LGAD) or 3D detectors and full detector systems integrates the electronic to the detector and studies the performance under high fluences.SISSAoai:inspirehep.net:14136352015 |
spellingShingle | Detectors and Experimental Techniques Baselga Bacardit, Marta Radiation hard semiconductor devices for very high luminosity colliders |
title | Radiation hard semiconductor devices for very high luminosity colliders |
title_full | Radiation hard semiconductor devices for very high luminosity colliders |
title_fullStr | Radiation hard semiconductor devices for very high luminosity colliders |
title_full_unstemmed | Radiation hard semiconductor devices for very high luminosity colliders |
title_short | Radiation hard semiconductor devices for very high luminosity colliders |
title_sort | radiation hard semiconductor devices for very high luminosity colliders |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.22323/1.254.0032 http://cds.cern.ch/record/2634246 |
work_keys_str_mv | AT baselgabacarditmarta radiationhardsemiconductordevicesforveryhighluminositycolliders |