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Radiation hard semiconductor devices for very high luminosity colliders

The next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&...

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Autor principal: Baselga Bacardit, Marta
Lenguaje:eng
Publicado: SISSA 2015
Materias:
Acceso en línea:https://dx.doi.org/10.22323/1.254.0032
http://cds.cern.ch/record/2634246
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author Baselga Bacardit, Marta
author_facet Baselga Bacardit, Marta
author_sort Baselga Bacardit, Marta
collection CERN
description The next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&D; collaboration devoted to develop radiation hard silicon detectors for the HL-LHC. The collaboration explores different research fields structured in different areas: defect and material characterization explores the macroscopic properties of materials before and after irradiation, detector characterization tests the devices with different techniques, new detector structures developes new devices such as Low Gain Avalanche Detectors (LGAD) or 3D detectors and full detector systems integrates the electronic to the detector and studies the performance under high fluences.
id oai-inspirehep.net-1413635
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
publisher SISSA
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spelling oai-inspirehep.net-14136352019-10-15T15:28:04Zdoi:10.22323/1.254.0032http://cds.cern.ch/record/2634246engBaselga Bacardit, MartaRadiation hard semiconductor devices for very high luminosity collidersDetectors and Experimental TechniquesThe next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&D; collaboration devoted to develop radiation hard silicon detectors for the HL-LHC. The collaboration explores different research fields structured in different areas: defect and material characterization explores the macroscopic properties of materials before and after irradiation, detector characterization tests the devices with different techniques, new detector structures developes new devices such as Low Gain Avalanche Detectors (LGAD) or 3D detectors and full detector systems integrates the electronic to the detector and studies the performance under high fluences.SISSAoai:inspirehep.net:14136352015
spellingShingle Detectors and Experimental Techniques
Baselga Bacardit, Marta
Radiation hard semiconductor devices for very high luminosity colliders
title Radiation hard semiconductor devices for very high luminosity colliders
title_full Radiation hard semiconductor devices for very high luminosity colliders
title_fullStr Radiation hard semiconductor devices for very high luminosity colliders
title_full_unstemmed Radiation hard semiconductor devices for very high luminosity colliders
title_short Radiation hard semiconductor devices for very high luminosity colliders
title_sort radiation hard semiconductor devices for very high luminosity colliders
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.22323/1.254.0032
http://cds.cern.ch/record/2634246
work_keys_str_mv AT baselgabacarditmarta radiationhardsemiconductordevicesforveryhighluminositycolliders