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Raman distributed temperature measurement at CERN high energy accelerator mixed field radiation test facility (CHARM)

In this paper we present a validation of distributed Raman temperature sensing (RDTS) at the CERN high energy accelerator mixed field radiation test facility (CHARM), newly developed in order to qualify electronics for the challenging radiation environment of accelerators and connected high energy p...

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Detalles Bibliográficos
Autores principales: Toccafondo, Iacopo, Nannipieri, Tiziano, Signorini, Alessandro, Guillermain, Elisa, Kuhnhenn, Jochen, Brugger, Markus, Pasquale, Fabrizio Di
Lenguaje:eng
Publicado: 2015
Materias:
Acceso en línea:https://dx.doi.org/10.1117/12.2191551
http://cds.cern.ch/record/2159203
Descripción
Sumario:In this paper we present a validation of distributed Raman temperature sensing (RDTS) at the CERN high energy accelerator mixed field radiation test facility (CHARM), newly developed in order to qualify electronics for the challenging radiation environment of accelerators and connected high energy physics experiments. By investigating the effect of wavelength dependent radiation induced absorption (RIA) on the Raman Stokes and anti-Stokes light components in radiation tolerant Ge-doped multi-mode (MM) graded-index optical fibers, we demonstrate that Raman DTS used in loop configuration is robust to harsh environments in which the fiber is exposed to a mixed radiation field. The temperature profiles measured on commercial Ge-doped optical fibers is fully reliable and therefore, can be used to correct the RIA temperature dependence in distributed radiation sensing systems based on P-doped optical fibers.© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.