Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process

New pixel detector concepts, based on commercial high voltage and/or high resistivity CMOS processes, are being investigated as a possible candidate to the inner and outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. A depleted monolithic active pixel sensor on thick film SOI technology...

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Detalles Bibliográficos
Autores principales: Fernandez-Perez, S, Backhaus, M, Fernandez-Garcia, M, Gallrapp, C, Hemperek, T, Kishishita, T, Krueger, H, Moll, M, Padilla, C, Pernegger, H
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/11/01/C01063
http://cds.cern.ch/record/2244600

Internet

https://dx.doi.org/10.1088/1748-0221/11/01/C01063
http://cds.cern.ch/record/2244600

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