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Power dissipation studies on planar n + -in-n pixel sensors

Research and development laboratory measurements of non-irradiated and irradiated planar n+ -in-n pixel sensor structures are systematically investigated to determine the power dissipation of those sensors. Measurements were taken at different operation temperatures, sensor bias voltages, bulk thick...

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Detalles Bibliográficos
Autores principales: Klingenberg, R, Altenheiner, S, Bryan, D, Dungs, S, Gisen, A, Gößling, C, Hillringhaus, B, Kröninger, K, Ratering, C, Wittig, T
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.04.045
http://cds.cern.ch/record/2287834
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author Klingenberg, R
Altenheiner, S
Bryan, D
Dungs, S
Gisen, A
Gößling, C
Hillringhaus, B
Kröninger, K
Ratering, C
Wittig, T
author_facet Klingenberg, R
Altenheiner, S
Bryan, D
Dungs, S
Gisen, A
Gößling, C
Hillringhaus, B
Kröninger, K
Ratering, C
Wittig, T
author_sort Klingenberg, R
collection CERN
description Research and development laboratory measurements of non-irradiated and irradiated planar n+ -in-n pixel sensor structures are systematically investigated to determine the power dissipation of those sensors. Measurements were taken at different operation temperatures, sensor bias voltages, bulk thicknesses, sensor areas, and irradiation fluences. For planar n+ -in-n pixel sensors irradiated to HL-LHC fluences of some 1016neqcm−2 a power dissipation area density of (126±8) mW cm –2 at a temperature of −25 °C and at an operation voltage of 800 V is derived for small sensors with an area of about 0.7cm2 . For large sensors as planned for the ATLAS phase-II upgrade a power dissipation of 100 mW cm –2 is expected.
id oai-inspirehep.net-1481302
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling oai-inspirehep.net-14813022019-09-30T06:29:59Zdoi:10.1016/j.nima.2016.04.045http://cds.cern.ch/record/2287834engKlingenberg, RAltenheiner, SBryan, DDungs, SGisen, AGößling, CHillringhaus, BKröninger, KRatering, CWittig, TPower dissipation studies on planar n + -in-n pixel sensorsDetectors and Experimental TechniquesResearch and development laboratory measurements of non-irradiated and irradiated planar n+ -in-n pixel sensor structures are systematically investigated to determine the power dissipation of those sensors. Measurements were taken at different operation temperatures, sensor bias voltages, bulk thicknesses, sensor areas, and irradiation fluences. For planar n+ -in-n pixel sensors irradiated to HL-LHC fluences of some 1016neqcm−2 a power dissipation area density of (126±8) mW cm –2 at a temperature of −25 °C and at an operation voltage of 800 V is derived for small sensors with an area of about 0.7cm2 . For large sensors as planned for the ATLAS phase-II upgrade a power dissipation of 100 mW cm –2 is expected.oai:inspirehep.net:14813022016
spellingShingle Detectors and Experimental Techniques
Klingenberg, R
Altenheiner, S
Bryan, D
Dungs, S
Gisen, A
Gößling, C
Hillringhaus, B
Kröninger, K
Ratering, C
Wittig, T
Power dissipation studies on planar n + -in-n pixel sensors
title Power dissipation studies on planar n + -in-n pixel sensors
title_full Power dissipation studies on planar n + -in-n pixel sensors
title_fullStr Power dissipation studies on planar n + -in-n pixel sensors
title_full_unstemmed Power dissipation studies on planar n + -in-n pixel sensors
title_short Power dissipation studies on planar n + -in-n pixel sensors
title_sort power dissipation studies on planar n + -in-n pixel sensors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2016.04.045
http://cds.cern.ch/record/2287834
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