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Analytical model for Transient Current Technique (TCT) signal prediction and analysis for thin interface characterization
A silicon wafer bonding technique has been recently proposed for the fabrication of monolithic silicon radiation detectors. This new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer. Therefore, monolithic silicon detectors could be...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/11/12/C12080 http://cds.cern.ch/record/2265886 |