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On the determination of the substrate effective doping concentration of irradiated HV-CMOS sensors using an edge-TCT technique based on the Two-Photon-Absorption process
We introduce a new method based on the transient-current technique (TCT) for the radiation tolerance assessment of an n-in-p junction with a deep n-well on a relatively low-resistivity p-type substrate commonly used for HV-CMOS pixel sensors. The transient-current method here employed uses a femtose...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/12/01/C01038 http://cds.cern.ch/record/2275003 |