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Thin hybrid pixel assembly fabrication development with backside compensation layer

The ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m 2 . To keep the tracker material budget low it is crucial to minimize the mass of the p...

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Autores principales: Bates, R, Buttar, C, McMullen, T, Cunningham, L, Ashby, J, Doherty, F, Pares, G, Vignoud, L, Kholti, B, Vahanen, S
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.06.096
http://cds.cern.ch/record/2291594
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author Bates, R
Buttar, C
McMullen, T
Cunningham, L
Ashby, J
Doherty, F
Pares, G
Vignoud, L
Kholti, B
Vahanen, S
author_facet Bates, R
Buttar, C
McMullen, T
Cunningham, L
Ashby, J
Doherty, F
Pares, G
Vignoud, L
Kholti, B
Vahanen, S
author_sort Bates, R
collection CERN
description The ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m 2 . To keep the tracker material budget low it is crucial to minimize the mass of the pixel modules via thinning both the sensor and readout chip to about 150 μm each. The bump yield of thin module assemblies using solder based bump bonding can be problematic due to wafer bowing during solder reflow at high temperature. A new bump-bonding process using backside compensation on the readout chip to address the issue of low yield will be presented. The objective is to compensate dynamically the stress of the front side stack by adding a compensating layer to the backside of the wafer. A SiN and Al:Si stack has been chosen for the backside layer. The bow reducing effect of applying a backside compensation layer will be demonstrated using the FE-I4 wafer. The world's first results from assemblies produced from readout wafers thinned to 100 μm with a stress compensation layer are presented with bond yields close to 100% measured using the FE-I4 readout chip.
id oai-inspirehep.net-1513617
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-15136172019-09-30T06:29:59Zdoi:10.1016/j.nima.2016.06.096http://cds.cern.ch/record/2291594engBates, RButtar, CMcMullen, TCunningham, LAshby, JDoherty, FPares, GVignoud, LKholti, BVahanen, SThin hybrid pixel assembly fabrication development with backside compensation layerDetectors and Experimental TechniquesThe ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m 2 . To keep the tracker material budget low it is crucial to minimize the mass of the pixel modules via thinning both the sensor and readout chip to about 150 μm each. The bump yield of thin module assemblies using solder based bump bonding can be problematic due to wafer bowing during solder reflow at high temperature. A new bump-bonding process using backside compensation on the readout chip to address the issue of low yield will be presented. The objective is to compensate dynamically the stress of the front side stack by adding a compensating layer to the backside of the wafer. A SiN and Al:Si stack has been chosen for the backside layer. The bow reducing effect of applying a backside compensation layer will be demonstrated using the FE-I4 wafer. The world's first results from assemblies produced from readout wafers thinned to 100 μm with a stress compensation layer are presented with bond yields close to 100% measured using the FE-I4 readout chip.oai:inspirehep.net:15136172017
spellingShingle Detectors and Experimental Techniques
Bates, R
Buttar, C
McMullen, T
Cunningham, L
Ashby, J
Doherty, F
Pares, G
Vignoud, L
Kholti, B
Vahanen, S
Thin hybrid pixel assembly fabrication development with backside compensation layer
title Thin hybrid pixel assembly fabrication development with backside compensation layer
title_full Thin hybrid pixel assembly fabrication development with backside compensation layer
title_fullStr Thin hybrid pixel assembly fabrication development with backside compensation layer
title_full_unstemmed Thin hybrid pixel assembly fabrication development with backside compensation layer
title_short Thin hybrid pixel assembly fabrication development with backside compensation layer
title_sort thin hybrid pixel assembly fabrication development with backside compensation layer
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2016.06.096
http://cds.cern.ch/record/2291594
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AT dohertyf thinhybridpixelassemblyfabricationdevelopmentwithbacksidecompensationlayer
AT paresg thinhybridpixelassemblyfabricationdevelopmentwithbacksidecompensationlayer
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