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Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1
CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses o...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/12/02/P02010 http://cds.cern.ch/record/2275299 |
| _version_ | 1780955150934867968 |
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| author | Kanisauskas, K Affolder, A Arndt, K Bates, R Benoit, M Bello, F Di Blue, A Bortoletto, D Buckland, M Buttar, C Caragiulo, P Das, D Dopke, J Dragone, A Ehrler, F Fadeyev, V Galloway, Z Grabas, H Gregor, I M Grenier, P Grillo, A Hiti, B Hoeferkamp, M Hommels, L B A Huffman, B T John, J Kenney, C Kramberger, J Liang, Z Mandic, I Maneuski, D Martinez-Mckinney, F MacMahon, S Meng, L Mikuž, M Muenstermann, D Nickerson, R Peric, I Phillips, P Plackett, R Rubbo, F Segal, J Seidel, S Seiden, A Shipsey, I Song, W Staniztki, M Su, D Tamma, C Turchetta, R Vigani, L Volk, J Wang, R Warren, M Wilson, F Worm, S Xiu, Q Zhang, J Zhu, H |
| author_facet | Kanisauskas, K Affolder, A Arndt, K Bates, R Benoit, M Bello, F Di Blue, A Bortoletto, D Buckland, M Buttar, C Caragiulo, P Das, D Dopke, J Dragone, A Ehrler, F Fadeyev, V Galloway, Z Grabas, H Gregor, I M Grenier, P Grillo, A Hiti, B Hoeferkamp, M Hommels, L B A Huffman, B T John, J Kenney, C Kramberger, J Liang, Z Mandic, I Maneuski, D Martinez-Mckinney, F MacMahon, S Meng, L Mikuž, M Muenstermann, D Nickerson, R Peric, I Phillips, P Plackett, R Rubbo, F Segal, J Seidel, S Seiden, A Shipsey, I Song, W Staniztki, M Su, D Tamma, C Turchetta, R Vigani, L Volk, J Wang, R Warren, M Wilson, F Worm, S Xiu, Q Zhang, J Zhu, H |
| author_sort | Kanisauskas, K |
| collection | CERN |
| description | CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip 'HVStripV1' (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from $85 e^−$ to $386 e^−$ and from $75 e^−$ to $277 e^−$ for the corresponding pixels. |
| id | oai-inspirehep.net-1514110 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2017 |
| record_format | invenio |
| spelling | oai-inspirehep.net-15141102019-10-15T15:19:46Zdoi:10.1088/1748-0221/12/02/P02010http://cds.cern.ch/record/2275299engKanisauskas, KAffolder, AArndt, KBates, RBenoit, MBello, F DiBlue, ABortoletto, DBuckland, MButtar, CCaragiulo, PDas, DDopke, JDragone, AEhrler, FFadeyev, VGalloway, ZGrabas, HGregor, I MGrenier, PGrillo, AHiti, BHoeferkamp, MHommels, L B AHuffman, B TJohn, JKenney, CKramberger, JLiang, ZMandic, IManeuski, DMartinez-Mckinney, FMacMahon, SMeng, LMikuž, MMuenstermann, DNickerson, RPeric, IPhillips, PPlackett, RRubbo, FSegal, JSeidel, SSeiden, AShipsey, ISong, WStaniztki, MSu, DTamma, CTurchetta, RVigani, LVolk, JWang, RWarren, MWilson, FWorm, SXiu, QZhang, JZhu, HRadiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1Detectors and Experimental TechniquesCMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip 'HVStripV1' (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from $85 e^−$ to $386 e^−$ and from $75 e^−$ to $277 e^−$ for the corresponding pixels.oai:inspirehep.net:15141102017 |
| spellingShingle | Detectors and Experimental Techniques Kanisauskas, K Affolder, A Arndt, K Bates, R Benoit, M Bello, F Di Blue, A Bortoletto, D Buckland, M Buttar, C Caragiulo, P Das, D Dopke, J Dragone, A Ehrler, F Fadeyev, V Galloway, Z Grabas, H Gregor, I M Grenier, P Grillo, A Hiti, B Hoeferkamp, M Hommels, L B A Huffman, B T John, J Kenney, C Kramberger, J Liang, Z Mandic, I Maneuski, D Martinez-Mckinney, F MacMahon, S Meng, L Mikuž, M Muenstermann, D Nickerson, R Peric, I Phillips, P Plackett, R Rubbo, F Segal, J Seidel, S Seiden, A Shipsey, I Song, W Staniztki, M Su, D Tamma, C Turchetta, R Vigani, L Volk, J Wang, R Warren, M Wilson, F Worm, S Xiu, Q Zhang, J Zhu, H Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1 |
| title | Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1 |
| title_full | Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1 |
| title_fullStr | Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1 |
| title_full_unstemmed | Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1 |
| title_short | Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1 |
| title_sort | radiation hardness studies of ams hv-cmos 350 nm prototype chip hvstripv1 |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1088/1748-0221/12/02/P02010 http://cds.cern.ch/record/2275299 |
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