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Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments
This paper presents the designs and test results of two radiation tolerant 4 × 10 Gb/s vertical cavity surface emitting laser (VCSEL) array drivers VLAD and lpVLAD, both fabricated in a 1.2 V 65 nm CMOS technology. VLAD adopts a power efficient bandwidth-boost technology, and lpVLAD employs a novel...
| Autores principales: | , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/12/02/C02065 http://cds.cern.ch/record/2275302 |
| _version_ | 1780955151601762304 |
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| author | Guo, D Gong, D Xiang, A C Moreira, P Kulis, S Chen, J Hou, S Liu, C Liu, T Prosser, A He, H Sun, Q Wang, J Yang, D Ye, J Zhou, W |
| author_facet | Guo, D Gong, D Xiang, A C Moreira, P Kulis, S Chen, J Hou, S Liu, C Liu, T Prosser, A He, H Sun, Q Wang, J Yang, D Ye, J Zhou, W |
| author_sort | Guo, D |
| collection | CERN |
| description | This paper presents the designs and test results of two radiation tolerant 4 × 10 Gb/s vertical cavity surface emitting laser (VCSEL) array drivers VLAD and lpVLAD, both fabricated in a 1.2 V 65 nm CMOS technology. VLAD adopts a power efficient bandwidth-boost technology, and lpVLAD employs a novel high-efficiency output structure to achieve an ultra-low power consumption of 2.2 mW/Gb/ch with 2 mA bias current and 6 mA modulation current. Both drivers are optically tested passing 10 Gb/s eye mask with all channels active under the radiation of a total dose up to 350 Mrad(SiO(2)). |
| id | oai-inspirehep.net-1514989 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2017 |
| record_format | invenio |
| spelling | oai-inspirehep.net-15149892019-09-30T06:29:59Zdoi:10.1088/1748-0221/12/02/C02065http://cds.cern.ch/record/2275302engGuo, DGong, DXiang, A CMoreira, PKulis, SChen, JHou, SLiu, CLiu, TProsser, AHe, HSun, QWang, JYang, DYe, JZhou, WDevelopments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experimentsDetectors and Experimental TechniquesThis paper presents the designs and test results of two radiation tolerant 4 × 10 Gb/s vertical cavity surface emitting laser (VCSEL) array drivers VLAD and lpVLAD, both fabricated in a 1.2 V 65 nm CMOS technology. VLAD adopts a power efficient bandwidth-boost technology, and lpVLAD employs a novel high-efficiency output structure to achieve an ultra-low power consumption of 2.2 mW/Gb/ch with 2 mA bias current and 6 mA modulation current. Both drivers are optically tested passing 10 Gb/s eye mask with all channels active under the radiation of a total dose up to 350 Mrad(SiO(2)).FERMILAB-PUB-17-073-CDoai:inspirehep.net:15149892017 |
| spellingShingle | Detectors and Experimental Techniques Guo, D Gong, D Xiang, A C Moreira, P Kulis, S Chen, J Hou, S Liu, C Liu, T Prosser, A He, H Sun, Q Wang, J Yang, D Ye, J Zhou, W Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments |
| title | Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments |
| title_full | Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments |
| title_fullStr | Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments |
| title_full_unstemmed | Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments |
| title_short | Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments |
| title_sort | developments of two 4 × 10 gb/s vcsel array drivers in 65 nm cmos for hep experiments |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1088/1748-0221/12/02/C02065 http://cds.cern.ch/record/2275302 |
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